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Absorption of Oxygen in Silicon in the Near and the Far Infrared

โœ Scribed by Bosomworth, D. R.; Hayes, W.; Spray, A. R. L.; Watkins, G. D.


Book ID
120143732
Publisher
The Royal Society
Year
1970
Tongue
English
Weight
815 KB
Volume
317
Category
Article
ISSN
0962-8444

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We study numerically the thermal emission of highly doped silicon surfaces. We show that by modifying the doping, we can tune the frequency of emission. We also show that by taking advantage of the large local density of states due to surface-plasmon polaritons, radiative properties in the far field