An apparatus has been developed in which hcp He4 single crystals of high quafity are grown with a 0.3 probability of obtaining c-axis orientations of 0 or 90 ยฐ with respect to the direction of growth. Methods of influencing the relative distribution of crystals between these two angles have been obs
โฆ LIBER โฆ
Absorption factors for a modified bacon preferred-orientation technique
โ Scribed by J.C. Bokros
- Publisher
- Elsevier Science
- Year
- 1965
- Tongue
- English
- Weight
- 576 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0008-6223
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