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Absorption edge and internal electric fields in amorphous semiconductors

✍ Scribed by J. Tauc


Book ID
113183854
Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
429 KB
Volume
5
Category
Article
ISSN
0025-5408

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## Abstract The implicit and explicit contributions to the temperature dependence of the absorption edge in some amorphous forms of Si, Ge, GaP, and GaAs are reported. The results are used to test a model in which the valence (conduction) band states in amorphous material are a superposition of cry