About charge-transport mechanisms in mesoporous silicon under adsorption of plant viruses
✍ Scribed by Vashpanov, Yuriy ;Son, Jung-Young ;Kwack, Kae-Dal ;Woo, Sun-Bo ;Choi, Kyu-Hwan
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 878 KB
- Volume
- 206
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Changes in the electric parameters and the charge‐transport mechanism in a mesoporous silicon under adsorption of TORSV (tomato ringspot virus) and GFLV (grapevine fan leaf virus) NEPO‐viruses are analyzed. The mechanism influencing the electric characteristics of the mesoporous silicon under adsorption of the plant viruses is related with the changes in parameters of a potential‐barrier system due to redistribution of voltages at the silicon structure. The mechanism of charge transport in the mesoporous silicon is more likely connected to the changes in parameters of isotopic heterojunction barriers under small bias voltages, and it can be interpreted as Poole–Frenkel and tunnel conductivity for large bias. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)