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Ab initio theory of point defects in oxide materials: structure, properties, chemical reactivity

✍ Scribed by Gianfranco Pacchioni


Book ID
114370194
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
457 KB
Volume
2
Category
Article
ISSN
1293-2558

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Ab initio study of point defects in diel
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We discuss the influence of band structures and point defects (oxygen vacancies and interstitials, and praseodymium vacancies) in Pr 2 O 3 , PrO 2 , and PrSiO 3.5 on the electrical properties of high-K gate dielectrics for the application in CMOS technology. In particular, we consider the origin of