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Ab-initio study on interaction of hydrogen isotopes with charged defects in lithium oxide

✍ Scribed by Hisashi Tanigawa; Satoru Tanaka

Book ID
108345539
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
302 KB
Volume
307-311
Category
Article
ISSN
0022-3115

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We discuss the influence of band structures and point defects (oxygen vacancies and interstitials, and praseodymium vacancies) in Pr 2 O 3 , PrO 2 , and PrSiO 3.5 on the electrical properties of high-K gate dielectrics for the application in CMOS technology. In particular, we consider the origin of