Formation and properties of defects and
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F. Gao; W.J. Weber; H.Y. Xiao; X.T. Zu
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Article
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2009
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Elsevier Science
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English
⚖ 257 KB
Large-scale ab initio simulation methods have been employed to investigate the configurations and properties of defects in SiC. Atomic structures, formation energies and binding energies of small vacancy clusters have also been studied as a function of cluster size, and their relative stabilities ar