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Ab initio study of 2DEG at the surface of topological insulator Bi2Te3

โœ Scribed by M. G. Vergniory; T. V. Menshchikova; S. V. Eremeev; E. V. Chulkov


Book ID
114989353
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
444 KB
Volume
95
Category
Article
ISSN
0021-3640

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MBE growth optimization of topological i
โœ J. Krumrain; G. Mussler; S. Borisova; T. Stoica; L. Plucinski; C.M. Schneider; D ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 716 KB

We investigated the growth of the topological insulator Bi 2 Te 3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied u