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Ab initio simulation of the electronic structure of Ta2O5crystal modifications

✍ Scribed by T. V. Perevalov, A. V. Shaposhnikov


Book ID
120804351
Publisher
Springer
Year
2013
Tongue
English
Weight
254 KB
Volume
116
Category
Article
ISSN
1063-7761

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✦ Synopsis


Ab initio simulation of the electronic structure crystalline Ξ² and Ξ΄ phases of tantalum(V) oxide (Ta 2 O 5 ), representing a promising dielectric material for microelectronics, has been carried out. Both ideal crystals and those with neutral oxygen vacancies in various coordination positions have been studied. The simulation has been performed using the density functional theory with hybrid functionals involving the Har tree-Fock exchange energy. This approach gives a correct description of the bandgap width: 4.1 eV for Ξ² Ta 2 O 5 and 3.1 eV for Ξ΄ Ta 2 O 5 . The energy levels related to oxygen vacancies in various positions have been determined for the spectra of electron states in Ξ² and Ξ΄ Ta 2 O 5 polymorphs. It is established that the presence of oxygen vacancies in Ta 2 O 5 crystal modifications leads to the formation of characteristic absorption peaks in their electron energy loss spectra.


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