Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
✍ Scribed by Aradi, B.; Gali, A.; Deák, P.; Lowther, J. E.; Son, N. T.; Janzén, E.; Choyke, W. J.
- Book ID
- 120470542
- Publisher
- The American Physical Society
- Year
- 2001
- Tongue
- English
- Weight
- 786 KB
- Volume
- 63
- Category
- Article
- ISSN
- 1098-0121
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Large-scale ab initio simulation methods have been employed to investigate the configurations and properties of defects in SiC. Atomic structures, formation energies and binding energies of small vacancy clusters have also been studied as a function of cluster size, and their relative stabilities ar
## Abstract Stacking faults (SFs) in the cubic polytype of silicon carbide (3C‐SiC) can bring about the leakage current in devices or cause warping of wafers. Along with experimental efforts with the aim to reduce SFs in 3C‐SiC, theoretical approach is needed to reveal the mechanical aspects of SFs