## Abstract Stacking faults (SFs) in the cubic polytype of silicon carbide (3CβSiC) can bring about the leakage current in devices or cause warping of wafers. Along with experimental efforts with the aim to reduce SFs in 3CβSiC, theoretical approach is needed to reveal the mechanical aspects of SFs
β¦ LIBER β¦
Ab initio and density functional calculations of conformational energies and interconversion pathways in 1,2,3,6-tetrahydropyridine
β Scribed by Tung Tran; Thomas B. Malloy Jr.
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 444 KB
- Volume
- 970
- Category
- Article
- ISSN
- 0022-2860
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