✦ LIBER ✦
A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology
✍ Scribed by L. Martoglio; E. Richalot; G. Lissorgues; O. Picon
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 209 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
A wideband coplanar to inverted microstrip transition is developed for a low-loss and low-cost inverted line on silicon. The measurements and simulation results are presented. The measured performance of the back-to-back transitions exhibits an insertion loss of less than 0.4 dB and a return loss better than 13.5 dB over a bandwidth from 1 to 18 GHz. The simulation and measurement results agree closely.