A WATT-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology
✍ Scribed by C. C. Meng; W. Wang
- Book ID
- 102521717
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 110 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A one‐stage hybrid power amplifier integrated with gap‐coupled microstrip lines for impedance matching is demonstrated in this work. The gap‐coupled microstrip line amplifier module realized here can provide 15‐dB power gain, 33.5‐dBm output power, and 42% power‐added efficiency (PAE) at 2.3 GHz. The demonstrated topology is suitable in monolithic IC technology, especially in the millimeter‐wave frequency because the gap‐coupled microstrip lines can be easily compacted into small size. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 346–348, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20137