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A tunneling investigation of energy-gap anisotropy in superconducting bulk aluminum crystals

โœ Scribed by B. L. Blackford

Publisher
Springer US
Year
1976
Tongue
English
Weight
362 KB
Volume
23
Category
Article
ISSN
0022-2291

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โœฆ Synopsis

Tunnel junctions have been fabricated on vacuum-grown Al single crystals. An investigation of energy gap anisotropy in AI has been carried out and data from 25 tunnel junctions are presented. The reduced gap parameter 2A/kBT c was found to vary from 2.8 to 3.9. A value for the energy gap of thin AI films deposited on a single-crystal A1 substrate has also been obtained and compared to the gap found for similar films on glass slide substrates.

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