The kinetics of the electroreduction of anodically formed cobalt oxide layers in different carbonatibicarbonate aqueous solutions were investigated using combined voltammetric and potential step techniques. Tbe composition of tbe electrolyte was varied to cover wide pH and ionic strength ranges. The
A transition in the kinetics of electroreduction of anodically formed cobalt oxides. Influence of potentiostatic ageing
β Scribed by C.A. Gervasi; J.R. Vilche; P.E. Alvarez
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 622 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0013-4686
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β¦ Synopsis
The kinetics of the electroreduction of oxide layers prepared through controlled anodisation of high purity polycrystalline cobalt electrodes in carbonate-bicarbonate buffers, has been analysed with special emphasis laid on the influence of potentiostatic ageing during passive film formation. The present results reveal the occurrence of an ageing process related to the reaction product formed in the second oxidation stage. The ageing process of the anodically formed cobalt passive layers appears as an apparent increasing irreversibility of the electroreduction reaction. Longer times of ageing also result in the thinning of the oxide layer through partial chemical dissolution. The transition of the growth mechanism for the new phase from a 3-D to a 2-D electroreduction process is related to the magnitude of the rate constant orthogonal to the surface and the time of potentiostatic ageing. Physical limit for the growing phase in the vertical direction can be reached at relatively short times during the potentiostatic current transient experiments. The calculated values of the height of the growing phase during electroreduction conditions correlates well with the thickness of the anodic film.
π SIMILAR VOLUMES
Ah&met-The kinetics of anodization of bismuth in glycol-borate electrolytes is investigated using galvanostatic and potentiostatic methods. A model based on the ionic space charge concepts is proposed. The main assumption of the mode1 is that positive charge carriers are responsible for film growth,
## Abstract For Abstract see ChemInform Abstract in Full Text.