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A tin oxide semiconductor sensor for oxygen determination in the sub-ppm range

✍ Scribed by F. Allegretti; N. Buttá; L. Cinquegrani; S. Pizzini

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
445 KB
Volume
10
Category
Article
ISSN
0925-4005

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✦ Synopsis

Tin oxide sensors are currently used for the detection of reducing gases in air, although an appropriate use of these sensors could also be the detection of traces of oxygen in inert gas. The present work deals with the results of a systematic investigation on the possibility of using tin oxide sensors for the detection of sub-ppm amounts of oxygen in argon, as required by some applications in microelectronics.

📜 SIMILAR VOLUMES

Oxygen interaction of CdS-based gas sens
Oxygen interaction of CdS-based gas sensors with different stoichiometric compositions was studied by X-ray photoelectron spectroscopy (XPS) and thermal-desorption mass spectroscopy observations combined with conductivity measurements. Three different types of film with different atomic ratios of Cd/S were used in the study of oxygen chemisorption in a low-temperature range between 300 and 570 K. Spray pyrolysis was used for the deposition of the films on glass substrates; XPS and energy dispersive spectroscopy of X-ray together with atomic force microscopy and scanning electron microscopy were used for the characterization of the composition and structure of the films. It was possible to distinguish different temperature ranges for the thermal desorption of the different adsorbed oxygen species. A comparison of the data from XPS and mass-spectroscopy observations with conductance measurements allows to conclude that metallic surface atoms are responsible for different interactions of oxygen species with CdS surfaces.
📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 379 KB