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A three-terminal band-trap-band tunneling model for drain engineering and substrate bias effect on GIDL in MOSFET
✍ Scribed by Guo, J.-C.; Liu, Y.-C.; Chou, M.H.; Wang, M.T.; Shone, F.
- Book ID
- 114537358
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 216 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9383
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