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A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors

✍ Scribed by R. Hocine; A. Boudghene Stambouli; A. Saidane


Book ID
108411252
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
916 KB
Volume
65
Category
Article
ISSN
0167-9317

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