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A three-dimensional study of dislocation lines in an in-doped GaAs crystal by layer-by-layer tomography

✍ Scribed by Syuji Todoroki; Kazufumi Sakai; Tomoya Ogawa

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 287 KB
Volume: 103
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(90)90178-n

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