A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

✍ Scribed by Fiori, G.; Iannaccone, G.; Klimeck, G.

• Book ID: 114618356
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 407 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.878018