## Abstract We present a threeโdimensional (3D) semiโclassical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used twoโdimensional (2D) models. The advantages of our model, in terms of accu
A three-dimensional sharp interface model for the quantitative simulation of solutal dendritic growth
โ Scribed by Shiyan Pan; Mingfang Zhu
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 915 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1359-6454
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โฆ Synopsis
A three-dimensional (3-D) sharp interface model is developed to simulate the solutal dendritic growth in the low Pe ยดclet number regime. The model adopts a previously proposed solutal equilibrium approach to calculate the evolution of the solid/liquid interface. To describe specific crystallographic orientations of 3-D dendritic growth, a weighted mean curvature algorithm incorporated with the anisotropy of surface energy is proposed, allowing the simulation of 3-D dendrites with various orientations in a straightforward manner. The model validation is performed by comparing the simulations with the analytical predictions and experimental data for both single and multi-dendritic growth, which demonstrates the quantitative capabilities of the proposed model. The model efficiently reproduces realistic 3-D multi-equiaxed and columnar dendrites with various orientations and well-developed side branches.
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