✦ LIBER ✦

A three-dimensional device simulator for radiation-hard MOS-SOS transistors

✍ Scribed by Rafael Rios; Ronald K. Smeltzer; Robert Amantea; Allen Rothwarf

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 737 KB
Volume: 34
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(91)90231-m

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A quasi-three-dimensional large-signal c

A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device

✍ Allen P.I. Ho; C.T. Sah 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 788 KB

A three-dimensional Monte Carlo model fo

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

✍ T. Sadi; J.-L. Thobel 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 466 KB

## Abstract We present a three‐dimensional (3D) semi‐classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two‐dimensional (2D) models. The advantages of our model, in terms of accu

Three-dimensional simulation for negativ

Three-dimensional simulation for negative resistance characteristics of parasitic bipolar transistor in a small-sized mosfet structure

✍ Chiping Ju; Armen H. Zemanian 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 743 KB

The behaviours of parasitic bipolar transistors are investigated by exploring the physical mechanisms of negative resistance characteristics generated in a small-sized MOSFET structure. Physical experiments and three-dimensional simulations verify the expected negative resistance characteristics. Th