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A theoretical basis for Doherty amplifier bias control based on drain current characteristics

✍ Scribed by Karla J.I. Smith; Kimberley W. Eccleston; Peter T. Gough; Stephen I. Mann


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
217 KB
Volume
51
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

This article introduces a gate bias control scheme for Doherty amplifiers, based on the measured gate‐voltage to drain‐current transfer characteristics of the FETs used, and their ideal fundamental output currents. An amplifier was realized at 800 MHz, and achieved over 35% drain efficiency from 8–14 dBm input power. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2152–2156, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24565