Numerical simulation has been used to construct the concentration profiles of Ga and P atoms in In-rich melt at successive equally spaced layers in front of an InGaP crystal growing under normal conditions of liquid phase epitaxy (LPE). The growth rate has been calculated using the concentration gra
A theoretical approach to the In1-xGaxP LPE growth by computer simulation technique
β Scribed by Dizaji, H. R. ;Dhanasekaran, R.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 440 KB
- Volume
- 156
- Category
- Article
- ISSN
- 0031-8965
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