✦ LIBER ✦
A Theoretical Analysis of the Formation of Nonstoichiometric Point Defects in SiC Single Crystals Grown under Equilibrium Conditions at Different Partial Pressures of Silicon Vapor
✍ Scribed by A. P. Garshin; E. N. Mokhov; V. E. Shvaiko-Shvaikovskii
- Book ID
- 111569328
- Publisher
- Springer US
- Year
- 2003
- Tongue
- English
- Weight
- 92 KB
- Volume
- 44
- Category
- Article
- ISSN
- 1573-9139
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