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A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

✍ Scribed by Lu, I-Lin; Wu, Yuh-Renn; Singh, Jasprit


Book ID
127330247
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
779 KB
Volume
108
Category
Article
ISSN
0021-8979

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