A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
โ Scribed by I. A. Avrutskii; V. G. Litovchenko
- Book ID
- 110119551
- Publisher
- Springer
- Year
- 1997
- Tongue
- English
- Weight
- 107 KB
- Volume
- 31
- Category
- Article
- ISSN
- 1063-7826
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Photoconductivity (PC) measurements have been performed on narrow GaAs/A1GaAs quantum wells (QWs) using dye-laser excitation in a limited energy range: the vicinity of the excitons. The derived high resolution PC spectra are then compared with photoluminescence excitation (PLE) spectra in the same e
Low energy ion beam etching (IBE) at oblique angle at liquid nitrogen temperature has been applied for thinning of the cap layer of GaAs/InGaAs/GaAs (GaAs/AIGaAs/GaAs) heterostructures with near surface quantum wells (QWs) to study dielectric confinement effects . It was shown that this etching prov