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A Study of Relativistic Interface States

✍ Scribed by C. L. Roy; G. Roy

Book ID
104547750
Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
649 KB
Volume
121
Category
Article
ISSN
0370-1972

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Origin of HfO2/GaAs interface states and
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a b s t r a c t First principles calculations of HfO 2 /GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO 2 and GaAs surfaces. We find that a model neutral interface (HfO 2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell)