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A Structural Investigation of Ga3−xIn5+xSn2O16

✍ Scribed by D.D. Edwards; T.O. Mason; W. Sinkler; L.D. Marks; F. Goutenoire; K.R. Poeppelmeier

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
399 KB
Volume
140
Category
Article
ISSN
0022-4596

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✦ Synopsis

The structure of the recently reported transparent conductor, Ga 3؊x In 5؉x Sn 2 O 16 (0.3(x(1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods). This ''T-phase'' compound has an anion-deficient fluorite-derivative structure whose space group is I4 1 /a. Although there are similarities to the parent oxide structures, the T-phase lacks one of the distorted InO 6 octahedra observed in In 2 O 3 , which may account for its inability to be donor-doped by Sn.

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