A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor

✍ Scribed by Raychaudhuri, A.; Kolk, J.; Deen, M.J.; King, M.I.H.

• Book ID: 114536128
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 324 KB
• Volume: 42
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.391229