A SiGe injection-locked-oscillator using HBT injector operated in saturation region
✍ Scribed by Cheng-Chen Liu; Cheng-Cih Wang; Sheng-Lyang Jang; Miin-Horng Juang
- Book ID
- 102517585
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 349 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This letter proposes a wide‐locking range injection‐locked frequency oscillator (ILO) fabricated in the 0.35 μm SiGe 3P3M BiCMOS technology. The divider consists of a hetero‐junction bipolar transistor (HBT) cross‐coupled LC oscillator and two injection HBTs in series with the cross‐coupled HBTs. The HBT injectors and coupling transformers are regarded a voltage‐to‐voltage convection device to supply injection voltage to one port of mixer's input. At the supply voltage of 1.2 V, the free‐running frequency is from 6.8 to 7.43 GHz, the current and power consumption of the divider without buffers are 9.4 mA and 11.28 mW, respectively. At the incident power of 0 dBm, the total operational locking range of the ILO used as a divide‐by‐3 frequency divider is from the incident frequency 20.3 to 23.1 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:734–737, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25821