A self-consistent model for short-channe
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M. El Banna; M. El Nokali
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Article
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1989
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John Wiley and Sons
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English
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A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output