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A self-consistent solution for a general flux motion model

โœ Scribed by Qianghua Wang; Z.D. Wang; Xixian Yao


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
432 KB
Volume
254
Category
Article
ISSN
0921-4534

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A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output