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A self-consistent model for the SIT DC characteristics

✍ Scribed by Strollo, A.G.M.; Spirito, P.


Book ID
114534455
Publisher
IEEE
Year
1991
Tongue
English
Weight
926 KB
Volume
38
Category
Article
ISSN
0018-9383

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✍ M. El Banna; M. El Nokali πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 579 KB

A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output