A scalable single poly EEPROM cell for embedded memory applications

✍ Scribed by L. Baldi; A. Cascella; B. Vajana

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 298 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(97)00001-3

✦ Synopsis

An increasing number of integrated circuits requires the embedding of a limited amount (up to 16-64kbits) of EEPROM memory. For this application, low process complexity, robust structure and good reliability are more important than small cell size. in this paper we present the design and characterization of a single poly EEPROM cell, optimized for embedded applications, and characterized by a good shrink potential. A cell area of 68.7 #m 2 has been obtained in 0.7/~m technology, and electrical characterization has shown the possibility of achieving a programming time of less than 1 msec, while an endurance of more than 10 million cycles has been achieved at 125°C, with a programming time of 2 msec. By further shrink of the same basic layout, cell areas of 55 and 44/~m 2 have been obtained, and similar programming and endurance performances have been demonstrated.