A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

✍ Scribed by Voinigescu, S.P.; Maliepaard, M.C.; Showell, J.L.; Babcock, G.E.; Marchesan, D.; Schroter, M.; Schvan, P.; Harame, D.L.

• Book ID: 119774903
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 343 KB
• Volume: 32
• Category: Article
• ISSN: 0018-9200
• DOI: 10.1109/4.628757