## Abstract This paper summarizes some of the essential aspects of siliconβnanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowir
β¦ LIBER β¦
A review on electronic and optical properties of silicon nanowire and its different growth techniques
β Scribed by Mehedhi Hasan, Md Fazlul Huq, Zahid Hasan Mahmood
- Book ID
- 120798097
- Publisher
- Springer
- Year
- 2013
- Tongue
- English
- Weight
- 683 KB
- Volume
- 2
- Category
- Article
- ISSN
- 2193-1801
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**Siliconβbased nanowires** with embedded selfβassembled chains of gold silicide nanospheres (Au~2~Si@SiONW) have been prepared by annealing Si/Au bilayers. The diameter, number density, and length of the wires can be controlled by adjusting the bilayer thickness. The composite material displayed a