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A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

✍ Scribed by Torsi, A.; Yijie Zhao; Haitao Liu; Tanzawa, T.; Goda, A.; Kalavade, P.; Parat, K.


Book ID
114620251
Publisher
IEEE
Year
2011
Tongue
English
Weight
917 KB
Volume
58
Category
Article
ISSN
0018-9383

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