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A procedure for the evaluation and failure analysis of MOS memory circuits using the scanning electron microscope in potential contrast mode : S. K. Behera and D. P. Speer. 10th IEEE Annual Proceedings, Reliability Physics (1972), p. 5


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
111 KB
Volume
12
Category
Article
ISSN
0026-2714

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