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A possible new mechanism for defect formation in irradiated UO2

✍ Scribed by Desgranges, L.; Guimbretière, G.; Simon, P.; Jegou, C.; Caraballo, R.

Book ID
122823072
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
816 KB
Volume
315
Category
Article
ISSN
0168-583X

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## Abstract p–n diodes were fabricated from 3C‐SiC films heteroepitaxially grown atop on‐axis, Si‐face (0001) 4H‐SiC mesa substrate arrays [P. G. Neudeck et al., Mater. Sci. Forum **433–436**, 213 (2003); **527–529**, 1335 (2006)]. Images taken by electroluminescence‐based optical emission microsco