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A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths

✍ Scribed by C.J Gorter


Publisher
Elsevier Science
Year
1951
Weight
141 KB
Volume
17
Category
Article
ISSN
0031-8914

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Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metalΒ±organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450 C to