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A planar channeling technique to study the structure of the complexes formed by arsenic in silicon at high arsenic concentrations

✍ Scribed by G.P. Pokhil; A.F. Tulinov; A.A. Turinge; A.V. Dvurechensky; V.P. Popov


Book ID
113277869
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
284 KB
Volume
13
Category
Article
ISSN
0168-583X

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