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A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal Si

✍ Scribed by Akif Sultan; Melvyn Lobo; Surya Bhattacharya; Sanjay Banerjee; Shubneesh batra; M. Manning; C. Dennison


Book ID
112901504
Publisher
Springer US
Year
1993
Tongue
English
Weight
643 KB
Volume
22
Category
Article
ISSN
0361-5235

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