𝔖 Bobbio Scriptorium
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A physically based mobility model for numerical simulation of nonplanar devices

✍ Scribed by Lombardi, C.; Manzini, S.; Saporito, A.; Vanzi, M.


Book ID
119778767
Publisher
IEEE
Year
1988
Tongue
English
Weight
805 KB
Volume
7
Category
Article
ISSN
0278-0070

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Physically based 2D compact model for po
✍ P. M. Igic; M. S. Towers; P. A. Mawby πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 157 KB

## Abstract The two‐dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simul