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A physically-based C∞-continuous model for accumulation-mode SOI pMOSFETs

✍ Scribed by Iniguez, B.; Dessard, V.; Flandre, D.; Gentinne, B.

Book ID: 114537934
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 277 KB
Volume: 46
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.808063

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