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A physical model for threshold voltage instability in Si3N4-gate H+-sensitive FET's (pH ISFET's)

✍ Scribed by Jamasb, S.; Collins, S.D.; Smith, R.L.


Book ID
114537290
Publisher
IEEE
Year
1998
Tongue
English
Weight
159 KB
Volume
45
Category
Article
ISSN
0018-9383

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