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A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

✍ Scribed by Johnson, G.H.; Galloway, K.F.; Schrimpf, R.D.; Titus, J.L.; Wheatley, C.F.; Allenspach, M.; Dachs, C.


Book ID
118251733
Publisher
IEEE
Year
1996
Tongue
English
Weight
643 KB
Volume
43
Category
Article
ISSN
0018-9499

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