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A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits

✍ Scribed by Dongwook Suh; Fossum, J.G.


Book ID
114536069
Publisher
IEEE
Year
1995
Tongue
English
Weight
979 KB
Volume
42
Category
Article
ISSN
0018-9383

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