A pentacene field-effect transistor with light-programmable threshold voltage
β Scribed by Chengang Feng; Ting Mei; Xiao Hu; Neuzil Pavel
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 439 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1566-1199
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## Abstract The concept of using ion conducting membranes (50β150 ΞΌm thick) for gating lowβvoltage (1 V) organic fieldβeffect transistors (OFETs) is attractive due to its lowβcost and largeβarea manufacturing capabilities. Furthermore, the membranes can be tailorβmade to be ion conducting in any de
This paper reports on the processing and the characterization of pentacene organic field effect transistors (OFETs) with a two-layer gate dielectric consisting of a polymer (PMMA) on a high-k oxide (Ta 2 O 5 ). This dielectric stack has been designed in view to combine low voltage operating devices,