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A p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode grown by molecular beam epitaxy

✍ Scribed by Xiaoping Shao; S. Rommel; B. Orner; J. Kolodzey; P. Berger

Book ID: 126694963
Publisher: IEEE
Year: 1997
Tongue: English
Weight: 79 KB
Volume: 18
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.622513

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