A numerical simulation model for liquid phase electroepitaxial growth of GaInAs
β Scribed by S Dost; Z Qin
- Book ID
- 108342608
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 403 KB
- Volume
- 187
- Category
- Article
- ISSN
- 0022-0248
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## Abstract Results of timeβdependent simulations of growth of bulk binary IIIβV crystals by current controlled liquid phase electroepitaxy (LPEE) are presented using GaAs as example. Without any electrical current the LPEE system is isothermal, kept at 1073 K, thus no growth occurs. The electric c
The simulation technique based on the Potts model, originally applied to microstructural coarsening by Srolovitz et al. [Scripta metall. , 1983, 17, 2411 has been extended to study grain growth by Ostwald ripening in liquid phase sintered materials. The model, which makes no assumptions about solid